Male, PhD, Director of the King Abdullah University of science and technology of two-dimensional materials research laboratory, China record company chief technology officer in Taiwan, Taiwan's Wu Ta-Prize winner of the natural science Fund, winner of the Alexander von Humboldt Foundation of Germany.In the international field, the first successful preparation of large-area, high-quality, single-layer MoS2, and have prepared a WSe2, MoSe2, WS2 two-dimensional semiconductor materials such as, in the two-dimensional field of material preparation, in a foreword to the world.200 papers published in top international journals, h-factor 50, cited nearly 10,000 times.

1.Chhowalla M, Shin H S, Eda G, et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets[J]. Nature chemistry, 2013, 5(4): 263-275.

2.Lee Y H, Zhang X Q, Zhang W, et al. Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition[J]. Advanced Materials, 2012, 24(17): 2320-2325.

3.Liu K K, Zhang W, Lee Y H, et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates[J]. Nano letters, 2012, 12(3): 1538-1544.

4.Wang H, Yu L, Lee Y H, et al. Integrated circuits based on bilayer MoS2 transistors[J]. Nano letters, 2012, 12(9): 4674-4680.

5.Shi Y, Hamsen C, Jia X, et al. Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition[J]. Nano letters, 2010, 10(10): 4134-4139.

6.Shi Y, Zhou W, Lu A Y, et al. van der Waals epitaxy of MoS2 layers using graphene as growth templates[J]. Nano letters, 2012, 12(6): 2784-2791.